- All sections
- C - Chemistry; metallurgy
- C30B - Single-crystal growth; unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; refining by zone-melting of material; production of a homogeneous polycrystalline material with defined structure; single crystals or homogeneous polycrystalline material with defined structure; after-treatment of single crystals or a homogeneous polycrystalline material with defined structure; apparatus therefor
- C30B 11/08 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
Patent holdings for IPC class C30B 11/08
Total number of patents in this class: 18
10-year publication summary
3
|
0
|
1
|
5
|
3
|
1
|
0
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2
|
0
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0
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2015 | 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 |
Principal owners for this class
Owner |
All patents
|
This class
|
---|---|---|
Crystal Systems Corporation | 16 |
3 |
Shin-Etsu Chemical Co., Ltd. | 5132 |
2 |
UT-Battelle, LLC | 1333 |
2 |
Sumitomo Electric Industries, Ltd. | 14131 |
1 |
Consolidated Nuclear Security, LLC | 124 |
1 |
CTS Corporation | 274 |
1 |
Dowa Electronics Materials Co., Ltd. | 610 |
1 |
Fisk University | 20 |
1 |
Ibaraki University | 46 |
1 |
JX Nippon Mining & Metals Corporation | 1576 |
1 |
Silicor Materials Inc. | 21 |
1 |
The Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences | 29 |
1 |
Cubicpv Inc. | 118 |
1 |
Rtx Corporation | 8674 |
1 |
Other owners | 0 |